| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,350 pcs
|
5350 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,083 pcs
|
1083 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA70N10 is an N-Channel enhancement mode power MOSFET produced using onsemi's proprietary planar stripe and DMOS technology. This device has been specifically designed to reduce on-state resistance and provide superior switching performance with high avalanche energy strength. Typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power systems.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 100V, continuous drain current of 70A at a case temperature of 25°C (49.5A at 100°C), and a pulsed drain current capability of 280A. The maximum on-resistance is 23mΩ at Vgs=10V and Id=35A. The device features a low typical gate charge of 85nC and input capacitance of 3300pF at Vds=25V. Avalanche energy ratings include 1300mJ for single pulse and 21.4mJ repetitive.
Thermal characteristics include a maximum power dissipation of 214W at Tc=25°C, operating junction temperature range of -55°C to 175°C, and thermal resistance junction-to-case of 0.7°C/W. The MOSFET is packaged in a through-hole TO-3P-3 (SC-65-3) package with supplier device package TO-3PN.
The FQA70N10 is 100% avalanche tested and is a Pb-Free device. It is RoHS3 compliant, REACH unaffected, and has an MSL (Moisture Sensitivity Level) of 1 with unlimited floor life.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.11 | $4.11 |
| 30+ | $2.27 | $2.27 |
| 60+ | $2.05 | $2.05 |
| 120+ | $1.86 | $1.86 |
| 510+ | $1.56 | $1.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The MOSFET is available in a TO-3P-3 or SC-65-3 through-hole package, with supplier device package TO-3PN.
The operating junction temperature range is -55°C to 175°C.
Yes, the device is Pb-Free and RoHS3 compliant as per datasheet statement.
At case temperature 100°C, maximum continuous drain current is 49.5A.
Maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.
Maximum on-resistance is 23mΩ at Vgs=10V and Id=35A.