FQA6N90C-F109 The FQA6N90C-F109 is an N-channel enhancement mode power MOSFET from ON Semiconductor, rated for 900 V drain-source voltage and 6 A continuous drain current. It features a low typical gate charge of 30 nC and is supplied in a through-hole TO-3PN package.
Mfr Part #:

FQA6N90C-F109

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQA6N90C-F109 is an N-channel enhancement mode power MOSFET from ON Semiconductor, rated for 900 V drain-source voltage and 6 A continuous drain current. It features a low typical gate charge of 30 nC and is supplied in a through-hole TO-3PN package.
✓ Total Stock: 133 pcs

FQA6N90C-F109 Available from 1 distributor

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FQA6N90C-F109 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
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Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
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Vgs (Max)
Vgs(th) (Max) @ Id

FQA6N90C-F109 Description

Short technical summary and product information.

The FQA6N90C-F109 is an N-channel enhancement mode power MOSFET from ON Semiconductor, part of the QFET family. It is rated for a maximum drain-source voltage of 900 V and a continuous drain current of 6.0 A at TC=25°C (3.87 A at TC=100°C). The device features a maximum on-resistance of 2.3 Ω at VGS=10V and ID=3A, with a typical on-resistance of 1.93 Ω.

 

Designed for high-voltage switching, the MOSFET has a typical gate charge of 30 nC and a typical reverse transfer capacitance of 11 pF. It is 100% avalanche tested and supports a single-pulse avalanche energy of 650 mJ and repetitive avalanche energy of 19.8 mJ. Maximum power dissipation is 198 W at TC=25°C.

 

The FQA6N90C-F109 is housed in a through-hole TO-3PN package (TO-3P-3, SC-65-3) and operates over a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 0.63 °C/W maximum. The device is RoHS compliant and supplied in tubes of 30 units.

 

Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQA6N90C-F109 Quick Information

Product Type: Power MOSFET
Series: FQA6N90C
Canonical Name: N-Channel QFET MOSFET
Subcategory: N-Channel Power MOSFET

FQA6N90C-F109 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

FQA6N90C-F109 Features

  • Rated for 900V drain-source voltage.
  • Handles 6A continuous drain current.
  • Maximum on-resistance is 2.3Ω at 10V.
  • RoHS compliant and avalanche tested.
  • Supplied in a TO-3PN package.

FQA6N90C-F109 Applications

  • Suitable for switched mode power supplies.
  • Used in active power factor correction.
  • Designed for electronic lamp ballasts.

FQA6N90C-F109 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQA6N90C-F109?

The maximum drain-source voltage (Vdss) is 900 V.

What package is the FQA6N90C-F109 available in?

The through-hole TO-3PN package (also listed as TO-3P-3, SC-65-3).

What is the operating temperature range of the FQA6N90C-F109?

The junction operating temperature range is -55°C to +150°C.

Is the FQA6N90C-F109 RoHS compliant?

The product is listed as RoHS compliant (RoHS3) in the supplier data, though compliance is not independently verified.

What is the maximum continuous drain current of the FQA6N90C-F109?

The maximum continuous drain current is 6.0 A at TC=25°C, derated to 3.87 A at TC=100°C.

What is the on-resistance of the FQA6N90C-F109?

Maximum RDS(on) is 2.3 Ω at VGS=10V, ID=3A; typical is 1.93 Ω.

What is the maximum power dissipation of the FQA6N90C-F109?

Maximum power dissipation is 198 W at TC=25°C.

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