FQA65N20 The FQA65N20 is an N-Channel MOSFET from On Semiconductor, rated for 200V drain-source voltage and 65A continuous drain current. It features a low on-resistance of 32mOhm and is available in a TO-3PN package.
Mfr Part #:

FQA65N20

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQA65N20 is an N-Channel MOSFET from On Semiconductor, rated for 200V drain-source voltage and 65A continuous drain current. It features a low on-resistance of 32mOhm and is available in a TO-3PN package.
✓ Total Stock: 4,867 pcs
$ Price Range: $4.21

FQA65N20 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FQA65N20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA65N20 Description

Short technical summary and product information.

The FQA65N20 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-power switching applications, offering a drain-to-source voltage rating of 200V and a continuous drain current of 65A at 25°C case temperature. The device features a maximum on-resistance of 32mOhm at a gate-source voltage of 10V and a drain current of 32.5A, ensuring efficient power handling with minimal conduction losses.

 

This MOSFET has a maximum gate threshold voltage of 5V at a drain current of 250µA, and a maximum gate charge of 200nC at 10V, which influences switching performance. The input capacitance is rated at 7900pF at a drain-source voltage of 25V. The device can dissipate up to 310W of power at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The FQA65N20 is housed in a TO-3P-3 (SC-65-3) package with a through-hole mounting style, and the supplier device package is TO-3PN. This package is suitable for applications requiring robust thermal performance and mechanical stability. The device is RoHS3 compliant and has an MSL of 1 (unlimited), indicating no moisture sensitivity restrictions.

FQA65N20 Quick Information

Product Type: MOSFET Transistor
Series: QFET
Canonical Name: N-Channel MOSFET Transistor
Subcategory: Single N-Channel

FQA65N20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

FQA65N20 Estimated Pricing

Qty Low High
450+ $4.21 $4.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA65N20 Features

  • N-Channel MOSFET with 200V rating.
  • 65A continuous drain current capability.
  • Low 32mOhm on-resistance at 10V.
  • Through-hole TO-3PN package.
  • RoHS3 compliant and MSL 1.

FQA65N20 Applications

  • Ideal for high-power switching circuits.
  • Used in power supply and converter designs.
  • Suitable for motor control applications.
  • Applicable in inverter and UPS systems.

FQA65N20 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FQA65N20?

The FQA65N20 has a drain-to-source voltage rating of 200V.

What is the maximum continuous drain current of the FQA65N20?

The maximum continuous drain current is 65A at a case temperature of 25°C.

What is the on-resistance of the FQA65N20?

The maximum on-resistance is 32mOhm at a drain current of 32.5A and a gate-source voltage of 10V.

What is the operating temperature range of the FQA65N20?

The operating junction temperature range is -55°C to 150°C.

What is the package type of the FQA65N20?

The FQA65N20 is available in a TO-3P-3 (SC-65-3) package with through-hole mounting, and the supplier device package is TO-3PN.

Is the FQA65N20 RoHS compliant?

The FQA65N20 is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

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