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FQA62N25C The FQA62N25C is an N-Channel power MOSFET from ON Semiconductor. It provides 250V drain-source voltage rating, 62A continuous drain current, and 35mΩ maximum on-resistance.
Mfr Part #:

FQA62N25C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQA62N25C is an N-Channel power MOSFET from ON Semiconductor. It provides 250V drain-source voltage rating, 62A continuous drain current, and 35mΩ maximum on-resistance.
✓ Total Stock: 1,277 pcs

FQA62N25C Available from 2 distributors

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Xingangxin ✓
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1,077 pcs
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1077 pcs On Request 1 On Request On Request On Request On Request On Request
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200 pcs
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200 pcs On Request 1 On Request On Request On Request On Request On Request
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FQA62N25C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQA62N25C Description

Short technical summary and product information.

The FQA62N25C is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-power switching applications and delivers a drain-source voltage rating of 250V and a continuous drain current of 62A at case temperature (Tc). The maximum drain-source on-resistance is 35 milliohms at a gate drive voltage of 10V.

 

This device features a maximum power dissipation of 298W at Tc, an input capacitance of 6280 pF at 25V, and a gate charge of 130 nC at 10V. The gate threshold voltage is 4V maximum at 250µA, and the gate-source voltage can be driven to ±30V. It operates over a junction temperature range of -55°C to 150°C.

 

The FQA62N25C is offered in a TO-3P-3 (SC-65-3) through-hole package, with a supplier device package designation of TO-3PN. Its through-hole mounting allows straightforward integration into power boards. These characteristics make it well suited for power switching and conversion circuits.

FQA62N25C Quick Information

Product Type: MOSFET Transistor
Series: QFET
Canonical Name: N-Channel Power MOSFET (250V, 62A, TO-3PN)
Subcategory: Power MOSFET

FQA62N25C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA62N25C Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • Handles continuous drain current up to 62A.
  • Low on-resistance of 35 milliohms at 10V drive.
  • Through-hole TO-3PN package for power designs.

FQA62N25C Applications

  • Suitable for high-power switching circuits.
  • Common in motor drive and inverter stages.
  • Used in switch-mode power supply designs.
  • Ideal for DC-DC converter output stages.

FQA62N25C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQA62N25C?

The drain-source voltage rating is 250V.

What is the maximum continuous drain current?

The maximum continuous drain current is 62A at case temperature (Tc).

What is the on-resistance of the FQA62N25C?

The maximum on-resistance is 35 milliohms at 31A drain current and 10V gate-source voltage.

What is the operating temperature range?

The junction operating temperature ranges from -55°C to 150°C.

What package is the FQA62N25C available in?

It is available in a TO-3P-3 (SC-65-3) through-hole package, with supplier device package TO-3PN.

Is the FQA62N25C RoHS compliant?

Based on existing data, the part is listed as RoHS3 Compliant, but this status is unverified.

What is the gate charge of the FQA62N25C?

The maximum gate charge is 130 nC at 10V gate-source voltage.

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