FQA55N25 FQA55N25 is an N-Channel power MOSFET from ON Semiconductor. It supports 250V drain-source voltage and 55A drain current, with maximum on-resistance of 40mΩ.
Mfr Part #:

FQA55N25

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQA55N25 is an N-Channel power MOSFET from ON Semiconductor. It supports 250V drain-source voltage and 55A drain current, with maximum on-resistance of 40mΩ.
✓ Total Stock: 2,920 pcs
$ Price Range: $3.19

FQA55N25 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,010 pcs
2010 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
910 pcs
910 pcs On Request 1 On Request On Request 07+ On Request On Request

FQA55N25 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA55N25 Description

Short technical summary and product information.

FQA55N25 is an N-Channel MOSFET manufactured by ON Semiconductor. It is a high-voltage power transistor with a drain-to-source voltage rating of 250V and a continuous drain current rating of 55A at case temperature. The maximum on-resistance is 40mΩ at 27.5A drain current and 10V gate drive.

 

The part features a gate threshold voltage maximum of 5V, a maximum gate-source voltage of ±30V, and a maximum gate charge of 180nC. Input capacitance is 6250pF, and maximum power dissipation is 310W at case temperature. The operating junction temperature ranges from -55°C to 150°C.

 

This MOSFET is suitable for high-voltage, high-current switching circuits. The TO-3P-3 (SC-65-3) package, also known as TO-3PN, is configured for through-hole PCB mounting.

FQA55N25 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: N-Channel Power MOSFET, 250V, 55A, TO-3PN
Subcategory: Single N-Channel Power MOSFET

FQA55N25 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA55N25 Estimated Pricing

Qty Low High
1+ $3.19 $3.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA55N25 Features

  • Rated for 250V drain-source voltage.
  • Handles 55A drain current at Tc.
  • Offers low 40mΩ maximum on-resistance.
  • Available in through-hole TO-3PN package.
  • Operating temperature from -55°C to 150°C.

FQA55N25 Applications

  • High-voltage, high-current power switching circuits.
  • Load switching applications with up to 55A.
  • Power conversion and switching circuits.

FQA55N25 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FQA55N25?

The FQA55N25 has a drain-to-source voltage rating of 250V.

What is the maximum drain current of the FQA55N25?

The maximum drain current is 55A at case temperature (Tc).

What is the on-resistance of the FQA55N25?

The maximum on-resistance is 40mΩ at 27.5A drain current and 10V gate-source voltage.

What package is the FQA55N25 available in?

The FQA55N25 is available in a TO-3P-3 (SC-65-3) package, with a supplier device package of TO-3PN.

What is the operating temperature range of the FQA55N25?

The operating junction temperature range is -55°C to 150°C.

Is the FQA55N25 RoHS compliant?

The part data lists the FQA55N25 as RoHS3 compliant, though this has not been independently verified.

What is the maximum gate charge of the FQA55N25?

The maximum gate charge is 180nC at a gate-source voltage of 10V.

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