| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,010 pcs
|
2010 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
910 pcs
|
910 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FQA55N25 is an N-Channel MOSFET manufactured by ON Semiconductor. It is a high-voltage power transistor with a drain-to-source voltage rating of 250V and a continuous drain current rating of 55A at case temperature. The maximum on-resistance is 40mΩ at 27.5A drain current and 10V gate drive.
The part features a gate threshold voltage maximum of 5V, a maximum gate-source voltage of ±30V, and a maximum gate charge of 180nC. Input capacitance is 6250pF, and maximum power dissipation is 310W at case temperature. The operating junction temperature ranges from -55°C to 150°C.
This MOSFET is suitable for high-voltage, high-current switching circuits. The TO-3P-3 (SC-65-3) package, also known as TO-3PN, is configured for through-hole PCB mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.19 | $3.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FQA55N25 has a drain-to-source voltage rating of 250V.
The maximum drain current is 55A at case temperature (Tc).
The maximum on-resistance is 40mΩ at 27.5A drain current and 10V gate-source voltage.
The FQA55N25 is available in a TO-3P-3 (SC-65-3) package, with a supplier device package of TO-3PN.
The operating junction temperature range is -55°C to 150°C.
The part data lists the FQA55N25 as RoHS3 compliant, though this has not been independently verified.
The maximum gate charge is 180nC at a gate-source voltage of 10V.