| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA48N20 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-power switching applications requiring a drain-source voltage rating of 200V and continuous drain current of 48A (Tc). The maximum on-resistance is 50mOhm at Id = 24A and Vgs = 10V, with a maximum gate charge of 130 nC at 10V and input capacitance of 5000 pF at Vds = 25V. The device is housed in a through-hole TO-3P package (TO-3P-3, SC-65-3) and can dissipate up to 280W at case temperature. The operating junction temperature range spans -55°C to +150°C, suitable for demanding industrial environments.
The drain-source voltage is 200V.
The maximum continuous drain current is 48A at case temperature.
The maximum on-resistance is 50mOhm at Id = 24A and Vgs = 10V.
The device is available in a through-hole TO-3P-3 (SC-65-3) package, with supplier device package TO-3P.
The operating junction temperature range is -55°C to +150°C.
RoHS3 compliance status is reported but unverified.