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FQA47P06 FQA47P06 is a 60V P-Channel MOSFET by On Semiconductor. It features 55A continuous drain current and low on-resistance of 26mΩ.
Mfr Part #:

FQA47P06

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQA47P06 is a 60V P-Channel MOSFET by On Semiconductor. It features 55A continuous drain current and low on-resistance of 26mΩ.
Total Stock: 3,000 pcs

FQA47P06 Available from 1 distributor

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FQA47P06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case-to-Sink Thermal Resistance (Typ)
Current
Drain Current (Nominal @ Tc = 100 °C)
Drain Current (Nominal @ Tc = 25 °C)
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction-to-Ambient Thermal Resistance (Max)
Junction-to-Case Thermal Resistance (Max)
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Single Pulsed Avalanche Energy
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA47P06 Description

Short technical summary and product information.

The FQA47P06 is a P-Channel enhancement mode power MOSFET designed for low voltage applications. It offers a drain-source voltage (Vdss) of 60V and a continuous drain current of -55A at 25°C (Tc). The device features a maximum on-resistance of 26 mΩ at Vgs=10V, ensuring high efficiency in switching circuits. With a maximum gate charge of 110 nC and input capacitance of 3600 pF, it supports fast switching performance. The MOSFET is built using Fairchild's planar stripe DMOS technology and is avalanche rated with a single pulsed avalanche energy of 820 mJ. It is housed in a through-hole TO-3P-3 package suitable for high-power dissipation up to 214W. The operating junction temperature range is -55°C to 175°C, making it robust for demanding environments. Typical applications include automotive electronics, DC/DC converters, and high-efficiency power management in portable devices.

FQA47P06 Quick Information

Product Type: P-Channel MOSFET
Series: QFET
Canonical Name: FQA47P06 60V P-Channel MOSFET
Subcategory: P-Channel MOSFET

FQA47P06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FQA47P06 Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current of -55A at 25°C.
  • Low on-resistance of 26 mΩ typical.
  • Fast switching with low gate charge.
  • Through-hole TO-3P package for easy mounting.

FQA47P06 Applications

  • Used in automotive power management systems.
  • Ideal for DC/DC converter circuits.
  • Suitable for high-efficiency switching power supplies.
  • For portable and battery-operated products.

FQA47P06 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQA47P06?

The FQA47P06 has a maximum drain-source voltage (Vdss) of 60V.

What is the continuous drain current?

The continuous drain current is -55A at Tc=25°C and -38.9A at Tc=100°C.

What is the on-resistance of the FQA47P06?

Maximum on-resistance is 26 mΩ at Vgs=10V, Id=27.5A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the FQA47P06 available in?

The FQA47P06 is available in a TO-3P-3 through-hole package.

Is the FQA47P06 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the gate charge of the FQA47P06?

The maximum gate charge is 110 nC at Vgs=10V.

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