| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA44N10 is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's planar stripe DMOS technology. It is designed for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. Key specifications include a drain-source breakdown voltage of 100V, continuous drain current of 48A at 25°C (34A at 100°C), and a maximum on-resistance of 39 mOhm at VGS=10V (typical 30 mOhm). The device offers low gate charge (typical 48 nC) and low reverse transfer capacitance (typical 85 pF) for efficient switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 530 mJ and improved dv/dt capability of 6.0 V/ns. The MOSFET is available in a TO-3P through-hole package with a maximum junction temperature rating of 175°C. Thermal resistance junction-to-case is 0.83°C/W and junction-to-ambient is 40°C/W. The part is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 450+ | $0.86 | $0.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V minimum at ID=250µA.
The continuous drain current is 48A at TC=25°C and 34A at TC=100°C.
The maximum on-resistance is 39 mOhm at VGS=10V, ID=24A; typical is 30 mOhm.
The typical gate charge is 48 nC at VGS=10V, with a maximum of 62 nC.
The operating junction temperature range is -55°C to +175°C.
It is available in a TO-3P-3, SC-65-3 through-hole package (supplier device package TO-3P).
The part is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.