| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,350 pcs
|
3350 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Channels | |
| Current Rating | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Fairchild Semiconductor FQA38N30 is an N-Channel enhancement mode power MOSFET utilizing proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance and provide superior switching performance. It is capable of withstanding high energy pulses in avalanche and commutation modes.
Key electrical specifications include a breakdown voltage of 300V and a maximum on-resistance (RDS(on)) of 85mΩ. The device has a continuous drain current rating of 38.4A. It features a typical input capacitance of 4.4nF, a rise time of 430ns, and a fall time of 190ns.
With a maximum power dissipation of 290W, the FQA38N30 is suitable for various power applications. It operates within a temperature range of -55°C to 150°C. The MOSFET is designed for through-hole mounting and has 3 terminals.
This MOSFET is produced using Fairchild's advanced DMOS technology, tailored for efficiency and reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.20 | $8.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) of the FQA38N30 is 300V.
The RDS(on) maximum value for the FQA38N30 is 85mΩ.
The input capacitance of the FQA38N30 is 4.4nF.
The maximum operating temperature of the FQA38N30 is 150°C.
The maximum drain current rating for the FQA38N30 is 38.4A.
The FQA38N30 comes in a through-hole package.
Yes, the FQA38N30 is RoHS3 compliant.