FQA38N30 The FQA38N30 is a 300V, 38.4A N-Channel MOSFET from On Semiconductor in a TO-3P-3 through-hole package.
Mfr Part #:

FQA38N30

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQA38N30 is a 300V, 38.4A N-Channel MOSFET from On Semiconductor in a TO-3P-3 through-hole package.
✓ Total Stock: 4,025 pcs
$ Price Range: $3.84 - $8.59

FQA38N30 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
425 pcs
425 pcs On Request 1 On Request On Request On Request On Request On Request

FQA38N30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA38N30 Description

Short technical summary and product information.

The FQA38N30 is a high-voltage N-Channel enhancement-mode power MOSFET designed for switching and linear applications. It features a drain-to-source voltage (Vdss) of 300V and a continuous drain current of 38.4A at case temperature (Tc). The device offers a maximum drain-source on-resistance of 85mΩ at 19.2A and 10V gate drive, enabling efficient power conversion.

 

Gate drive is optimized at 10V, with a maximum gate threshold voltage of 5V at 250µA drain current. The input capacitance is 4400pF at 25V, and total gate charge is 120nC at 10V, allowing moderate switching speeds. Power dissipation is rated at 290W at case temperature, and the junction temperature range is -55°C to 150°C.

 

The FQA38N30 is housed in a TO-3P-3 (SC-65-3) through-hole package, suitable for mounting on heatsinks in high-power circuits. It is RoHS3 compliant and has MSL level 1 (unlimited floor life). This device is ideal for AC/DC power supplies, DC/DC converters, motor drives, and other industrial power applications requiring high voltage and current handling.

FQA38N30 Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQA38N30 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQA38N30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA38N30 Estimated Pricing

Qty Low High
1+ $8.59 $8.59
10+ $6.05 $6.05
100+ $4.65 $4.65
450+ $4.21 $4.21
900+ $3.84 $3.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA38N30 Features

  • 300V drain-to-source voltage rating.
  • 38.4A continuous drain current (Tc).
  • 85mΩ on-resistance at 19.2A, 10V.
  • TO-3P-3 through-hole package.
  • RoHS3 compliant and MSL level 1.

FQA38N30 Applications

  • Used in AC/DC power supplies.
  • Ideal for DC/DC converter designs.
  • Suitable for motor drive circuits.
  • Used in high-voltage switching applications.

FQA38N30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FQA38N30?

The maximum drain-to-source voltage (Vdss) is 300 V.

What is the continuous drain current rating at case temperature?

The maximum continuous drain current (Id) at Tc is 38.4 A.

What is the on-resistance at 19.2A and 10V?

The maximum drain-source on-resistance (Rds(on)) is 85 mΩ at Id = 19.2 A and Vgs = 10 V.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FQA38N30 come in?

The FQA38N30 is available in a TO-3P-3 (SC-65-3) through-hole package.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 5 V at Id = 250 µA.

What is the maximum power dissipation at case temperature?

The maximum power dissipation (Pd) at Tc is 290 W.

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