| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
99 pcs
|
99 pcs | On Request | 1 | On Request | On Request | 245 | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA34N20 is a N-Channel power MOSFET manufactured by On Semiconductor. It operates with a maximum drain-source voltage of 200V and can continuously conduct 34A at a case temperature of 25°C. The device features a low on-resistance of 75mOhm maximum at 17A drain current and 10V gate voltage. It is designed for through-hole mounting in TO-3P package (also known as SC-65-3). The MOSFET offers a maximum gate charge of 78nC at 10V, making it suitable for switching applications. With a maximum power dissipation of 210W and operating junction temperature range from -55°C to 150°C, it can handle high-power designs. The input capacitance is 3100pF at 25V drain-source voltage. The gate threshold voltage is 5V maximum at 250µA. The device is listed as RoHS3 compliant, with an MSL rating of 1 (unlimited) and REACH unaffected status.
200V maximum.
Through-hole TO-3P-3 or SC-65-3 package.
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 compliant.
34A at case temperature 25°C.
5V maximum at 250µA drain current.
210W at case temperature.