FQA30N40 FQA30N40 is an N-Channel MOSFET from On Semiconductor, rated for 400V drain-source voltage and 30A continuous drain current. It features a low on-resistance of 140mΩ and comes in a TO-3PN package.
Mfr Part #:

FQA30N40

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQA30N40 is an N-Channel MOSFET from On Semiconductor, rated for 400V drain-source voltage and 30A continuous drain current. It features a low on-resistance of 140mΩ and comes in a TO-3PN package.
✓ Total Stock: 2,400 pcs
$ Price Range: $2.56

FQA30N40 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,400 pcs
2400 pcs On Request 1 On Request On Request On Request On Request On Request

FQA30N40 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA30N40 Description

Short technical summary and product information.

The FQA30N40 is an N-Channel enhancement mode silicon MOSFET manufactured by On Semiconductor. It is designed for high power switching applications requiring a drain-source voltage of 400V and continuous drain current of 30A (at Tc). The device features a maximum on-resistance of 140mΩ at 15A gate drive voltage of 10V, with a typical gate charge of 120nC and input capacitance of 4400pF. The gate threshold voltage is 5V maximum at 250µA drain current. The maximum power dissipation is 290W at case temperature Tc, and the operating junction temperature range is -55°C to 150°C. The MOSFET utilizes Metal Oxide semiconductor technology and is available in a through-hole TO-3P-3 / SC-65-3 package, with the supplier device package designated as TO-3PN. The device is suitable for applications such as power supplies, motor control, and inverters where high voltage and current handling are required. The through-hole mounting allows for efficient thermal management through the case.

FQA30N40 Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQA30N40 N-Channel MOSFET
Subcategory: Single MOSFET

FQA30N40 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA30N40 Estimated Pricing

Qty Low High
450+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA30N40 Features

  • Rated for 400V drain-source voltage.
  • Supports 30A continuous drain current.
  • Low on-resistance of 140mOhm.
  • Housed in TO-3PN through-hole package.
  • Capable of 290W power dissipation.

FQA30N40 Applications

  • Ideal for high voltage power supplies.
  • Used in motor control circuits.
  • Suitable for inverter applications.
  • Applicable in power factor correction.

FQA30N40 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQA30N40?

The FQA30N40 has a drain-source voltage rating of 400V.

What is the continuous drain current rating?

The continuous drain current is 30A at case temperature Tc.

What is the maximum on-resistance?

The maximum on-resistance is 140mΩ at 15A drain current and 10V gate voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FQA30N40 come in?

The FQA30N40 is available in a TO-3P-3 / SC-65-3 through-hole package, with the supplier device package designated as TO-3PN.

Is the FQA30N40 RoHS compliant?

The FQA30N40 is listed as RoHS3 compliant, but this information is unverified.

What is the gate charge of the FQA30N40?

The maximum gate charge is 120nC at 10V gate voltage.

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