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FQA28N50F FQA28N50F is a 500V N-Channel MOSFET from ON Semiconductor. It features 28.4A continuous drain current, 160mΩ on-resistance, and is housed in a TO-3P package.
Mfr Part #:

FQA28N50F

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQA28N50F is a 500V N-Channel MOSFET from ON Semiconductor. It features 28.4A continuous drain current, 160mΩ on-resistance, and is housed in a TO-3P package.
✓ Total Stock: 3,200 pcs
$ Price Range: $4.32

FQA28N50F Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,200 pcs
On Request
3200 pcs On Request 1 On Request On Request On Request On Request On Request
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FQA28N50F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQA28N50F Description

Short technical summary and product information.

The FQA28N50F is a 500V N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. Key electrical specifications include a maximum drain-source voltage of 500V, continuous drain current of 28.4A at 25°C case temperature, and a maximum on-resistance of 160mΩ at VGS=10V and ID=14.2A. The device also features low gate charge (typical 110nC) and low reverse transfer capacitance (typical 60pF) for fast switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 1300mJ. The body diode has a fast recovery time of 250ns maximum, making it suitable for applications where the body diode is used, such as phase-shift ZVS and full-bridge topologies. The MOSFET is offered in a TO-3P-3 (SC-65-3) through-hole package with a maximum power dissipation of 310W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. Thermal resistance junction-to-case is 0.4°C/W maximum.

FQA28N50F Quick Information

Product Type: MOSFET
Series: FQA Series
Canonical Name: FQA28N50F 500V N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQA28N50F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA28N50F Estimated Pricing

Qty Low High
1+ $4.32 $4.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA28N50F Features

  • 500V drain-source voltage rating.
  • 28.4A continuous drain current at 25°C.
  • Low on-resistance of 160mΩ at 10V gate drive.
  • Fast body diode recovery time of 250ns.
  • 100% avalanche tested for ruggedness.

FQA28N50F Applications

  • Suitable for high efficiency switch mode power supplies.
  • Ideal for phase-shift ZVS and full-bridge topologies.
  • Used in applications requiring fast switching and low gate charge.
  • Well suited for circuits using the body diode.

FQA28N50F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQA28N50F?

500V.

What package is the FQA28N50F available in?

TO-3P-3, SC-65-3 (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQA28N50F RoHS compliant?

RoHS3 Compliant (unverified).

What is the continuous drain current rating?

28.4A at TC=25°C, 18A at TC=100°C.

What is the typical on-resistance?

160mΩ maximum at VGS=10V, ID=14.2A.

What is the typical gate charge?

110 nC typical, 140 nC maximum at VGS=10V.

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