FQA28N50 FQA28N50 is an N-Channel power MOSFET from On Semiconductor with 500V drain-source breakdown voltage and 28.4A continuous drain current. It features a low on-resistance of 160mOhm and is housed in a TO-3P package.
Mfr Part #:

FQA28N50

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQA28N50 is an N-Channel power MOSFET from On Semiconductor with 500V drain-source breakdown voltage and 28.4A continuous drain current. It features a low on-resistance of 160mOhm and is housed in a TO-3P package.
Total Stock: 39,359 pcs
$ Price Range: $26.12

FQA28N50 Available from 4 distributors

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FQA28N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA28N50 Description

Short technical summary and product information.

The FQA28N50 is an N-Channel power MOSFET manufactured by On Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications. Key electrical specifications include a drain-source breakdown voltage of 500V and a continuous drain current of 28.4A at 25°C case temperature.

 

The device features a maximum on-resistance of 160mOhm at a gate-source voltage of 10V and a drain current of 14.2A. Gate charge is 140nC maximum at 10V, and input capacitance is 5600pF maximum at 25V drain-source voltage. The gate threshold voltage is 5V maximum at 250µA drain current. Maximum power dissipation is 310W at case temperature.

 

The FQA28N50 is suitable for applications such as switch-mode power supplies, motor control, and other power conversion circuits requiring high voltage and current handling. The device is through-hole mounted and comes in a TO-3P-3 package (also known as SC-65-3). The operating temperature range is -55°C to 150°C junction temperature.

FQA28N50 Quick Information

Product Type: Power MOSFET
Series: FQA
Canonical Name: FQA28N50 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQA28N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA28N50 Estimated Pricing

Qty Low High
1+ $26.12 $26.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA28N50 Features

  • 500V drain-source breakdown voltage.
  • 28.4A continuous drain current rating.
  • 160mOhm maximum on-resistance at 10V.
  • Through-hole TO-3P-3 package.
  • RoHS3 compliant and REACH unaffected.

FQA28N50 Applications

  • Used in switch-mode power supplies.
  • Suitable for motor control circuits.
  • Ideal for high-voltage power inverters.
  • Applicable in DC-DC converters.

FQA28N50 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQA28N50?

The drain-source breakdown voltage is 500V.

What package does the FQA28N50 come in?

The FQA28N50 is available in a TO-3P-3 (SC-65-3) through-hole package.

What is the operating temperature range of the FQA28N50?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the FQA28N50 RoHS compliant?

The FQA28N50 is marked as RoHS3 compliant, but this status is unverified.

What is the on-resistance of the FQA28N50?

The maximum on-resistance is 160mOhm at Vgs=10V and Id=14.2A.

What is the gate charge of the FQA28N50?

The maximum gate charge is 140nC at Vgs=10V.

How is the FQA28N50 mounted?

It is a through-hole mount device.

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