| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
428 pcs
|
428 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA27N25 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor, designed for high-voltage power switching applications. It is built using MOSFET (Metal Oxide) technology and offers a drain-to-source voltage rating of 250V with a continuous drain current capability of 27A.
Key electrical characteristics include a maximum drain-source on-resistance of 110mOhm at a gate-source voltage of 10V and a drain current of 13.5A. The device features a maximum gate threshold voltage of 5V at 250µA drain current. It has a maximum gate charge of 65nC at 10V and an input capacitance of 2450pF at 25V drain-source voltage, enabling efficient switching performance.
The FQA27N25 is housed in a TO-3P-3 or SC-65-3 through-hole package, with a supplier device package of TO-3PN. It supports a maximum power dissipation of 210W and operates over a junction temperature range of -55°C to 150°C. The maximum gate-source voltage is ±30V.
| Qty | Low | High |
|---|---|---|
| 151+ | $1.99 | $1.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 250V.
The continuous drain current is 27A.
The FQA27N25 is available in a TO-3P-3, SC-65-3 through-hole package, with a supplier device package of TO-3PN.
The operating temperature range is -55°C to 150°C (junction temperature).
The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.
The maximum drain-source on-resistance is 110mOhm at a gate-source voltage of 10V and a drain current of 13.5A.
The maximum power dissipation is 210W.