| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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730 pcs
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730 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA24N50F is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor (now onsemi) using their proprietary planar stripe DMOS technology. This device is designed to minimize on-state resistance and provide superior switching performance, making it well suited for high efficiency switch mode power supplies.
Key electrical specifications include a drain-source voltage (Vdss) of 500V, continuous drain current of 24A at Tc=25°C (15.2A at Tc=100°C), and a maximum drain-source on-resistance of 200mOhm at VGS=10V and ID=12A. The device features low gate charge (typical 90nC) and low reverse transfer capacitance (typical 55pF) for fast switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 1100mJ.
The FQA24N50F is housed in a TO-3P-3 (SC-65-3) through-hole package with a junction-to-case thermal resistance of 0.43°C/W. The operating junction temperature range is -55°C to +150°C. The device also features a fast recovery body diode with a maximum recovery time of 250ns, making it suitable for phase-shift ZVS and full-bridge topologies.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.14 | $3.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500 V.
The continuous drain current is 24 A at Tc = 25°C and 15.2 A at Tc = 100°C.
The maximum on-resistance is 200 mOhm at VGS = 10 V and ID = 12 A. Typical on-resistance is 156 mOhm under the same conditions.
The operating junction temperature range is -55°C to +150°C.
The FQA24N50F is available in a TO-3P-3 (SC-65-3) through-hole package, with a supplier device package of TO-3P.
The device is listed as RoHS3 Compliant. Note: this status is unverified and should be confirmed from official documentation.
The gate threshold voltage is minimum 3 V and maximum 5 V at ID = 250 µA.