Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	24A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	290W (Tc)
Rds On (Max) @ Id, Vgs	200mOhm @ 12A, 10V
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

FQA24N50_F109

FQA24N50_F109 Specifications Quick View