FQA19N60 The FQA19N60 is an N-Channel MOSFET from onsemi, rated for 600V drain-source voltage and 18.5A drain current. It comes in a TO-3PN through-hole package.
Mfr Part #:

FQA19N60

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQA19N60 is an N-Channel MOSFET from onsemi, rated for 600V drain-source voltage and 18.5A drain current. It comes in a TO-3PN through-hole package.
✓ Total Stock: 8,856 pcs
$ Price Range: $3.19

FQA19N60 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,358 pcs
6358 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,498 pcs
2498 pcs On Request 1 On Request On Request 24+ On Request On Request

FQA19N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA19N60 Description

Short technical summary and product information.

The FQA19N60 is an N-Channel MOSFET manufactured by onsemi. It features a maximum drain-to-source voltage of 600V and a maximum drain current of 18.5A at case temperature. The device is designed for high-voltage switching applications.

 

With a maximum on-resistance of 380mOhm at 9.3A and 10V gate drive, the FQA19N60 offers efficient conduction. The gate charge is 90nC at 10V, and input capacitance is 3600pF at 25V, providing predictable switching behavior.

 

The device is housed in a TO-3P-3 / SC-65-3 package with a TO-3PN supplier device package, suitable for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 300W at case temperature.

FQA19N60 Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: N-Channel MOSFET, 600V, 18.5A, TO-3PN
Subcategory: Single MOSFET

FQA19N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA19N60 Estimated Pricing

Qty Low High
450+ $3.19 $3.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA19N60 Features

  • N-Channel MOSFET with 600V rating.
  • 18.5A drain current at case temperature.
  • Low on-resistance of 380mOhm.
  • Through-hole TO-3PN package.
  • Operates from -55°C to 150°C.

FQA19N60 Applications

  • Suitable for high-voltage power switching circuits.
  • Used in power supply and inverter designs.
  • Ideal for motor control applications.
  • Applicable in industrial power conversion systems.

FQA19N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FQA19N60?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the maximum drain current of the FQA19N60?

The maximum drain current is 18.5A at case temperature (Tc).

What is the operating temperature range of the FQA19N60?

The operating junction temperature range is -55°C to 150°C.

What package does the FQA19N60 come in?

The FQA19N60 is available in a TO-3P-3 / SC-65-3 package, with a supplier device package of TO-3PN.

What is the maximum on-resistance of the FQA19N60?

The maximum on-resistance is 380mOhm at Id = 9.3A and Vgs = 10V.

What is the maximum power dissipation of the FQA19N60?

The maximum power dissipation is 300W at case temperature (Tc).

Is the FQA19N60 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with official documentation.

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