| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The FQA16N50-F109 is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for high-voltage switching applications. It is rated for a maximum drain-source voltage of 500V and a continuous drain current of 16A at case temperature. The device features a maximum on-resistance of 320mOhm when driven with a 10V gate-source voltage.
This MOSFET is housed in a TO-3P through-hole package, suitable for power dissipation up to 200W at case temperature. The gate charge is 75nC maximum at 10V, and the input capacitance is 3000pF maximum at 25V drain-source. The operating junction temperature range is -55°C to 150°C.
Typical applications include switch-mode power supplies, motor control circuits, and other power conversion systems requiring high voltage and moderate current handling. The through-hole TO-3P package provides excellent thermal performance for heatsink mounting.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.44 | $1.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The continuous drain current is 16A at case temperature.
The maximum on-resistance is 320mOhm at a gate-source voltage of 10V and drain current of 8A.
It is available in a TO-3P-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified.