| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA160N08 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-power switching applications, offering a maximum drain-source voltage of 80V and a continuous drain current of 160A at Tc.
The device features a low maximum on-resistance of 7mOhm at Vgs=10V and Id=80A. It has a maximum gate charge of 290nC at Vgs=10V and input capacitance of 7900pF at Vds=25V. The gate threshold voltage is 4V maximum at Id=250µA. The drive voltage for maximum Rds(on) is 10V.
Power dissipation is up to 375W at Tc. Operating junction temperature range is -55°C to 175°C. The device is through-hole mountable and comes in a TO-3P-3 / SC-65-3 package, with the supplier device package TO-3PN.
This MOSFET is suitable for high-current switching applications such as power supplies, motor drives, and DC-DC converters. Its low Rds(on) helps minimize conduction losses. The TO-3PN package provides efficient heat dissipation through the case.
80V.
TO-3P-3 / SC-65-3 (through-hole), with supplier device package TO-3PN.
-55°C to 175°C (junction temperature).
It is listed as RoHS3 compliant, but this data is unverified.
160A at Tc.
7mOhm at Vgs=10V, Id=80A.