| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,586 pcs
|
9586 pcs | On Request | 1 | On Request | On Request | 03+04+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA14N30 is an N-Channel enhancement-mode MOSFET from ON Semiconductor's QFET series. It is designed for high-voltage switching applications requiring efficient power conversion.
Key electrical specifications include a drain-source voltage (Vdss) of 300V, continuous drain current of 15A at Tc, and a maximum on-resistance of 290 mOhm at Vgs=10V and Id=7.5A. The gate threshold voltage is 5V maximum at Id=250µA, and the maximum gate-source voltage is ±30V. The device features a gate charge of 40 nC and input capacitance of 1360 pF, enabling fast switching performance.
The MOSFET is housed in a TO-3P-3 (SC-65-3) through-hole package, offering robust thermal performance with a maximum power dissipation of 160W at Tc. The operating junction temperature range is -55°C to 150°C.
This component is suitable for high-power switching circuits, such as switch-mode power supplies, uninterruptible power supplies, and motor drives.
| Qty | Low | High |
|---|---|---|
| 142+ | $2.11 | $2.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300V.
TO-3P-3 (SC-65-3) through-hole package.
-55°C to 150°C (junction).
Listed as RoHS3 compliant by distributors, but this is unverified.
290 mOhm maximum at Vgs=10V and Id=7.5A.