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FQA13N80-F109 N-Channel power MOSFET rated for 800V drain-source voltage and 12.6A continuous drain current. Features low on-resistance of 750mOhm and low gate charge for efficient switching.
Mfr Part #:

FQA13N80-F109

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET rated for 800V drain-source voltage and 12.6A continuous drain current. Features low on-resistance of 750mOhm and low gate charge for efficient switching.
✓ Total Stock: 170 pcs
$ Price Range: $4.10 - $7.06

FQA13N80-F109 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Flip Electronics ✓
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170 pcs
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FQA13N80-F109 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQA13N80-F109 Description

Short technical summary and product information.

This N-Channel enhancement mode power MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology. It is designed for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

 

Key specifications include a maximum drain-source voltage of 800V, continuous drain current of 12.6A at 25°C (8A at 100°C), and a low on-resistance of 750mOhm maximum at 10V gate drive. The device features low gate charge (68nC typical) and low reverse transfer capacitance (30pF typical) for improved switching performance. It is 100% avalanche tested with a single pulse avalanche energy rating of 1100mJ.

 

The MOSFET is housed in a TO-3P-3 (TO-3PN) through-hole package with a junction-to-case thermal resistance of 0.42°C/W. Operating junction temperature range is -55°C to 150°C. The device is Pb-Free and Halide Free.

FQA13N80-F109 Quick Information

Product Type: Power MOSFET
Canonical Name: FQA13N80-F109 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

FQA13N80-F109 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FQA13N80-F109 Estimated Pricing

Qty Low High
1+ $7.06 $7.06
10+ $4.10 $4.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA13N80-F109 Features

  • 800V drain-source voltage rating.
  • 12.6A continuous drain current.
  • Low on-resistance of 750 milliohms.
  • Low gate charge for fast switching.
  • Pb-Free and Halide Free device.

FQA13N80-F109 Applications

  • Ideal for switched mode power supplies.
  • Used in active power factor correction.
  • Suitable for electronic lamp ballasts.
  • High efficiency DC-DC converters.

FQA13N80-F109 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

800 V.

What package does this MOSFET come in?

TO-3P-3 (TO-3PN) through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this component RoHS compliant?

The datasheet states it is Pb-Free and Halide Free, but RoHS compliance is unverified.

What is the gate threshold voltage?

5V maximum at 250µA drain current.

What is the on-resistance?

750 milliohms maximum at 10V gate voltage and 6.3A drain current.

What is the avalanche energy rating?

1100 mJ single pulse avalanche energy.

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