| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQA12P20 is a P-Channel enhancement mode power MOSFET manufactured by On Semiconductor using Fairchild's proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance.
Key electrical specifications include a maximum drain-source voltage of -200V, continuous drain current of -12.6A at Tc=25°C, and a pulsed drain current capability of -50.4A. The drain-source on-resistance is typically 0.36Ω and maximum 0.47Ω at Vgs=-10V and Id=-6.3A. The device offers a low typical gate charge of 31nC and a maximum input capacitance of 1200pF.
The FQA12P20 is capable of handling 150W power dissipation at Tc=25°C and operates over a junction temperature range of -55°C to 150°C. It is packaged in a TO-3P-3 (SC-65-3) through-hole package, suitable for high-power applications requiring efficient heat dissipation.
The maximum drain-source voltage (Vdss) is -200V.
The continuous drain current is -12.6A at Tc=25°C.
The drain-source on-resistance is typically 0.36Ω and maximum 0.47Ω at Vgs=-10V and Id=-6.3A.
The FQA12P20 is available in a TO-3P-3 (SC-65-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The FQA12P20 is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.