| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,987 pcs
|
6987 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA11N90C is a 900V N-Channel enhancement mode power MOSFET from On Semiconductor (formerly Fairchild Semiconductor). It features a continuous drain current of 11A at 25°C, pulsed drain current of 44A, and a maximum on-resistance of 1.1 Ohms at Vgs=10V. The device is housed in a TO-3P package and is designed for high efficiency switch mode power supplies. It offers low gate charge (typical 60 nC) and low Crss (typical 23 pF) for fast switching. The MOSFET is 100% avalanche tested and has improved dv/dt capability. Operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.55 | $1.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 900 V.
The continuous drain current is 11 A at Tc=25°C.
The device is available in a TO-3P package (TO-3P-3, SC-65-3).
The operating temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 Compliant (unverified).
The maximum on-resistance is 1.1 Ohms at Vgs=10V, Id=5.5A.
The typical gate charge is 60 nC, maximum 80 nC at Vgs=10V.