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FQA11N90 The FQA11N90 is an N-Channel QFET MOSFET from On Semiconductor. It features a 900V drain-source voltage, 11.4A continuous drain current, and 960 mOhm maximum on-resistance.
Mfr Part #:

FQA11N90

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQA11N90 is an N-Channel QFET MOSFET from On Semiconductor. It features a 900V drain-source voltage, 11.4A continuous drain current, and 960 mOhm maximum on-resistance.
✓ Total Stock: 9,123 pcs
$ Price Range: $1.92 - $4.97

FQA11N90 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
5,450 pcs
On Request
5450 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Speed Components Ltd ✓
Non-Authorised Inventory information
73 pcs
On Request
73 pcs On Request 1 On Request On Request B0352 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQA11N90 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQA11N90 Description

Short technical summary and product information.

The FQA11N90 is an N-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This device is designed to deliver low on-state resistance and superior switching performance.

 

Key electrical specifications include a maximum drain-source voltage of 900V, continuous drain current of 11.4A at 25°C, and a maximum drain-source on-resistance of 960 mOhm at Vgs=10V. The device offers a typical gate charge of 72 nC and low reverse transfer capacitance of 30 pF, contributing to efficient switching.

 

The FQA11N90 is housed in a through-hole TO-3P package and is suitable for applications such as switched mode power supplies, active power factor correction, and electronic lamp ballasts. The device is RoHS compliant.

FQA11N90 Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQA11N90 N-Channel QFET MOSFET
Subcategory: Single MOSFET

FQA11N90 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA11N90 Estimated Pricing

Qty Low High
1+ $4.97 $4.97
200+ $1.92 $1.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA11N90 Features

  • 900V drain-source voltage rating.
  • 11.4A continuous drain current at 25°C.
  • 960 mOhm maximum on-resistance.
  • Low gate charge of 72 nC typical.
  • 100% avalanche tested for reliability.

FQA11N90 Applications

  • Suitable for switched mode power supplies.
  • Used in active power factor correction circuits.
  • Ideal for electronic lamp ballasts.

FQA11N90 FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IRFZ44N?

The maximum continuous drain current is 49A at Tc=25°C.

What is the typical drain-source on-resistance of the IRFZ44N?

The typical drain-source on-resistance is 0.75 Ω at Vgs=10V, Id=5.7A.

What is the maximum gate-source voltage for the IRFZ44N?

The maximum gate-source voltage is ±30V.

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