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FQA10N80C 800V N-Channel MOSFET with 10A continuous drain current and 1.1 Ohm on-resistance, in TO-3P package.
Mfr Part #:

FQA10N80C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
800V N-Channel MOSFET with 10A continuous drain current and 1.1 Ohm on-resistance, in TO-3P package.
✓ Total Stock: 1,000 pcs

FQA10N80C Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
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1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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FQA10N80C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQA10N80C Description

Short technical summary and product information.

The FQA10N80C is an 800V N-Channel enhancement mode power MOSFET from On Semiconductor, originally developed by Fairchild Semiconductor. It features a drain-source voltage of 800V, continuous drain current of 10A at 25°C (6.32A at 100°C), and a maximum on-resistance of 1.1 Ohm at Vgs=10V. The device uses QFET planar stripe DMOS technology for low gate charge (typical 44 nC) and fast switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 920 mJ. The MOSFET is housed in a through-hole TO-3P-3 package (SC-65-3) and is suitable for high efficiency switch mode power supplies. It operates over a junction temperature range of -55°C to 150°C.

FQA10N80C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQA10N80C - 800V N-Channel MOSFET (TO-3P)
Subcategory: N-Channel Power MOSFET

FQA10N80C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FQA10N80C Features

  • 800V drain-source voltage rating.
  • 10A continuous drain current at 25°C.
  • Low on-resistance of 1.1 Ohm max.
  • 100% avalanche tested at 920 mJ.
  • Fast switching with low gate charge.

FQA10N80C Applications

  • High efficiency switch mode power supplies.
  • Power factor correction circuits.
  • Motor control applications.
  • DC-DC converters.
  • Lighting ballasts.

FQA10N80C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the FQA10N80C?

-55°C to 150°C (junction temperature).

What package does the FQA10N80C come in?

TO-3P-3, SC-65-3 (through-hole).

Is the FQA10N80C RoHS compliant?

Marked as RoHS3 Compliant but unverified.

What is the maximum drain-source voltage?

800V.

What is the continuous drain current rating?

10A at Tc=25°C, 6.32A at Tc=100°C.

What is the on-resistance?

Maximum 1.1 Ohm at Id=5A, Vgs=10V.

Is the device avalanche rated?

Yes, single pulsed avalanche energy 920 mJ, repetitive 24 mJ.

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