| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon FP50R06W2E3BOMA1 is an Insulated Gate Bipolar Transistor (IGBT) module. This component is part of Infineon's power module offerings, suitable for various power conversion applications.
Key specifications include RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. These attributes indicate adherence to environmental standards and ease of handling during assembly.
As an IGBT module, it is designed for high-power switching applications. Specific electrical and thermal characteristics would typically be detailed in the manufacturer's datasheet, enabling engineers to integrate it into designs requiring efficient power control and conversion.
The product is classified under AC DC Configurable Power Supply Modules, suggesting its use in systems that require robust power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $44.26 | $44.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FP50R06W2E3BOMA1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.