| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon FP25R12KT3 is an IGBT module suitable for inverter applications. It features a maximum collector-emitter voltage of 1200V and a continuous DC collector current of 40A at 25°C.
Key electrical characteristics include a typical collector-emitter saturation voltage of 1.90V at 25A and 25°C, and a gate threshold voltage typically between 5.0V and 6.5V. The module exhibits low switching losses, with turn-on energy loss per pulse as low as 2.40mJ and turn-off energy loss per pulse as low as 1.80mJ at 25°C.
With a typical junction-to-case thermal resistance of 0.80 K/W, the FP25R12KT3 operates within a temperature range of -40°C to 125°C. Its robust design makes it suitable for demanding power electronic applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vces) for the FP25R12KT3 is 1200V at 25°C.
The continuous DC collector current (Ic) is 25A at 80°C case temperature and 40A at 25°C case temperature.
The typical gate threshold voltage (Vgeth) is 5.8V, with a minimum of 5.0V and a maximum of 6.5V.
At 25°C, the typical turn-on energy loss (Eon) is 2.40mJ and the typical turn-off energy loss (Eoff) is 1.80mJ.
The operating temperature range (Tvj op) is from -40°C to 125°C.
The typical thermal resistance from junction to case (RthJC) is 0.80 K/W.