| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,560 pcs
|
3560 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,580 pcs
|
1580 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The FOD814 from On Semiconductor is a 4-pin DIP phototransistor optocoupler. It consists of two gallium arsenide infrared emitting diodes connected in inverse parallel, driving a silicon phototransistor output.
Key electrical specifications include a minimum BVCEO of 70 V and a current transfer ratio ranging from 20% to 300% for the FOD814 group. The device is rated for an input-to-output test voltage of 1360 Vpeak (Method A) and 1594 V (Method B), with a maximum working insulation voltage of 850 V.
This optocoupler is suitable for applications such as AC line monitoring, unknown polarity DC sensing, and telephone line interfaces. It is housed in a 4-pin DIP package and is Pb-free.
Safety and regulatory approvals include UL1577 (5,000 V ACRMS for 1 minute) and DIN EN/IEC60747-5-5. The device operates within specific installation classifications and pollution degrees as defined by DIN VDE standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage (BVCEO) for the FOD814 is 70 V.
The current transfer ratio for the FOD814 is between 20% and 300%.
The FOD814 is approved under UL1577 (5,000 V ACRMS for 1 minute) and DIN EN/IEC60747-5-5.
The FOD814 is supplied in a 4-pin PDIP package.
Yes, the FOD814 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the FOD814 is 1.
Yes, the FOD814 is listed as REACH Unaffected.