FOD3150 The ON Semiconductor FOD3150 is a gate drive optocoupler designed for driving IGBT and MOSFETs. It features high noise immunity and a 1.0 A output current.
Mfr Part #:

FOD3150

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor FOD3150 is a gate drive optocoupler designed for driving IGBT and MOSFETs. It features high noise immunity and a 1.0 A output current.
Total Stock: 200,018 pcs
$ Price Range: $2.55

FOD3150 Available from 4 distributors

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186,150 pcs
186150 pcs On Request 1 On Request On Request On Request On Request On Request
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10,000 pcs
10000 pcs On Request 1 On Request On Request 21+ On Request On Request
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3,250 pcs
3250 pcs On Request 1 On Request On Request On Request On Request On Request
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618 pcs
618 pcs On Request 1 On Request On Request On Request On Request On Request

FOD3150 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Common Mode Transient Immunity (Min)
Current
Forward Current
Forward Voltage
Mounting Type
Number of Channels
Operating Temperature
Output Current
Power Dissipation
Propagation Delay
Propagation Delay tpLH
Pulse Width Distortion (Max)
Reverse Voltage
Rise
Supplier Device Package
Technology
Voltage

FOD3150 Description

Short technical summary and product information.

The ON Semiconductor FOD3150 is a high-performance gate drive optocoupler designed for demanding applications such as industrial inverters and uninterruptible power supplies. It is capable of driving power IGBT and MOSFET devices, offering a 1.0 A output current.

 

Key electrical specifications include a wide supply voltage range of 15 V to 30 V, a maximum propagation delay of 500 ns, and a maximum pulse width distortion of 300 ns. The device boasts high noise immunity, characterized by a minimum common mode rejection of 20 kV/µs. It also features under-voltage lockout (UVLO) with hysteresis for reliable operation.

 

This optocoupler utilizes onsemi's OPTOPLANAR packaging technology and is suitable for isolated IGBT/Power MOSFET gate drive applications. It operates within an extended industrial temperature range of -40°C to 100°C. Safety and regulatory approvals include UL1577 with 5000 VRMS isolation for 1 minute and DIN EN/IEC60747-5-5.

 

The FOD3150 is available in an 8-DIP package and is mounted via through-hole. It is a Pb-Free device, aligning with environmental standards.

FOD3150 Quick Information

Product Type: Gate Drive Optocoupler
Series: FOD3150
Canonical Name: FOD3150 Gate Drive Optocoupler
Subcategory: Gate Driver

FOD3150 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FOD3150 Estimated Pricing

Qty Low High
1+ $2.55 $2.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

FOD3150 Features

  • High noise immunity with 20 kV/µs CMR.
  • 1.0 A output current for IGBT/MOSFET drive.
  • 5000 VRMS isolation voltage rating.
  • Fast switching speeds up to 500 ns delay.
  • Wide operating temperature range -40°C to 100°C.

FOD3150 Applications

  • Ideal for industrial inverter applications.
  • Suitable for uninterruptible power supplies.
  • Used in induction heating systems.
  • Provides isolated IGBT/Power MOSFET gate drive.

FOD3150 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the output current of the FOD3150 optocoupler?

The FOD3150 optocoupler has a 1.0 A output current.

What is the isolation voltage for the FOD3150?

The FOD3150 has an isolation voltage of 5000 VRMS.

What is the operating temperature range for the FOD3150?

The FOD3150 operates from -40°C to 100°C.

What is the propagation delay of the FOD3150?

The maximum propagation delay for the FOD3150 is 500 ns.

What is the supply voltage range for the FOD3150?

The FOD3150 operates with a supply voltage range of 15 V to 30 V.

What is the common mode rejection of the FOD3150?

The FOD3150 has a minimum common mode rejection of 20 kV/µs.

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