| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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547 pcs
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547 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The FMV11N60EHF is an N-Channel MOSFET manufactured by Fujitsu Semiconductor, designed for power switching applications. It features a high drain-source breakdown voltage of 600V and a continuous drain current capability of 11A. The on-resistance is rated at a low 0.55 Ohms, contributing to efficient power transfer.
This MOSFET operates within a wide temperature range, from -55°C to 150°C, making it suitable for various environmental conditions. It also has a gate-source voltage tolerance of ±30V and a gate charge of 25nC.
The FMV11N60EHF is compliant with RoHS3 standards and has an MSL rating of 1, indicating unlimited usability under standard conditions. It is supplied in a standard package of 500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the FMV11N60EHF is 600V.
The continuous drain current (Id) for the FMV11N60EHF is 11A.
The on-resistance (Rds(on)) of the FMV11N60EHF is 0.55 Ohms.
The operating temperature range for the FMV11N60EHF is -55°C to 150°C.
Yes, the FMV11N60EHF is RoHS3 Compliant.