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FMMTH10TA NPN RF bipolar junction transistor from Diodes Incorporated. Collector-emitter breakdown voltage 25V, continuous collector current 25mA, transition frequency 650MHz.
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FMMTH10TA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
NPN RF bipolar junction transistor from Diodes Incorporated. Collector-emitter breakdown voltage 25V, continuous collector current 25mA, transition frequency 650MHz.
✓ Total Stock: 18,700 pcs

FMMTH10TA Available from 1 distributor

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Smaxon Electronics ✓
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18,700 pcs
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18700 pcs On Request 1 On Request On Request 00+ On Request On Request
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FMMTH10TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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FMMTH10TA Description

Short technical summary and product information.

The FMMTH10TA is an NPN silicon planar RF transistor from Diodes Incorporated designed for high-frequency amplifier and switching applications.

 

Key electrical characteristics include a minimum collector-emitter breakdown voltage of 25V, maximum continuous collector current of 25mA, and a typical transition frequency of 650MHz. The device offers a typical noise figure of 3dB and a maximum of 5dB at 500MHz, making it suitable for low-noise RF front-end stages. Maximum power dissipation is 330mW at 25°C ambient.

 

The transistor is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59). It features a minimum DC current gain (hFE) of 60 at 4mA collector current and 10V collector-emitter voltage. Maximum collector-emitter saturation voltage is 0.5V at 4mA collector current and 0.4mA base current.

 

This part is RoHS3 compliant and has an MSL rating of 1 (unlimited) per available data. It operates over a junction temperature range of -55°C to +150°C.

FMMTH10TA Quick Information

Product Type: RF Bipolar Junction Transistor
Canonical Name: Diodes Incorporated FMMTH10TA NPN RF Transistor
Subcategory: RF Transistors

FMMTH10TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FMMTH10TA Features

  • 650MHz typical transition frequency.
  • Low noise figure of 3dB typ at 500MHz.
  • Maximum collector current 25mA.
  • Surface mount SOT-23-3 package.
  • RoHS3 compliant.

FMMTH10TA Applications

  • RF amplifier stages up to UHF.
  • Low-noise oscillator circuits.
  • Signal processing in communication systems.
  • General purpose RF switching applications.

FMMTH10TA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FMMTH10TA?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 25V.

What is the transition frequency (fT) of this transistor?

The typical transition frequency is 650MHz at IC=4mA, VCE=10V, f=100MHz.

What package does the FMMTH10TA come in?

The FMMTH10TA is supplied in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59).

What is the operating temperature range?

The junction operating temperature range is -55°C to +150°C.

Is the FMMTH10TA RoHS compliant?

Yes, the FMMTH10TA is marked as RoHS3 compliant, though this information is unverified.

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