FMMT596TA FMMT596TA is a PNP silicon planar high voltage transistor from Diodes Incorporated, featuring a collector-emitter voltage of 200V and continuous collector current of 300mA. It is housed in a surface-mount SOT-23-3 package.
Mfr Part #:

FMMT596TA

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
FMMT596TA is a PNP silicon planar high voltage transistor from Diodes Incorporated, featuring a collector-emitter voltage of 200V and continuous collector current of 300mA. It is housed in a surface-mount SOT-23-3 package.
Total Stock: 106,157 pcs
$ Price Range: $0.17 - $0.94

FMMT596TA Available from 5 distributors

Authorised
Non-Authorised

FMMT596TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base-Emitter Saturation Voltage (Vbe Sat)
Base-Emitter Turn-On Voltage (VBE(on))
Collector Cut-off Current (ICBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Cut-off Current (ICES)
Collector-Emitter Saturation Voltage (VCE(sat)) (Maximum @ Ib=10 mA, Ic=100 mA)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC=1 mA, VCE=10 V)
DC Current Gain (hFE) (Minimum @ Ic=100 mA, Vce=10 V)
DC Current Gain (hFE) (Minimum @ Ic=400 mA, Vce=10 V)
Emitter Cut-off Current (IEBO)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cobo)
Peak Pulse Current (ICM)
Power
Reel Quantity
Reel Size
Supplier Device Package
Tape & Reel
Tape Width
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FMMT596TA Description

Short technical summary and product information.

The FMMT596TA is a PNP bipolar junction transistor designed for high voltage switching and amplification applications. With a maximum collector-emitter breakdown voltage of 200V and a continuous collector current rating of 300mA, it is suitable for a variety of medium-power circuits. The device offers a typical transition frequency of 150MHz, enabling use in moderate-speed switching applications. The DC current gain (hFE) is specified at multiple test conditions, with a minimum of 100 at 1mA and 100mA, and a minimum of 85 at 250mA. The collector-emitter saturation voltage is as low as 200mV at 100mA collector current, promoting efficient operation. This transistor is packaged in a compact SOT-23-3 surface-mount package, supplied on tape and reel with 3000 pieces per reel. It is RoHS compliant and REACH unaffected, suitable for lead-free soldering processes. The operating junction temperature range is from -55°C to 150°C, allowing use in demanding environments.

FMMT596TA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FMMT596TA PNP Bipolar Transistor
Subcategory: Single Transistors

FMMT596TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FMMT596TA Estimated Pricing

Qty Low High
1+ $0.94 $0.94
10+ $0.64 $0.64
100+ $0.45 $0.45
500+ $0.27 $0.27
1,000+ $0.23 $0.23
3,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

FMMT596TA Features

  • High voltage PNP transistor, 200V VCEO.
  • Continuous collector current of 300mA.
  • Transition frequency of 150MHz.
  • Low saturation voltage, 200mV at 100mA.
  • Surface-mount SOT-23-3 package.

FMMT596TA Applications

  • Used in high voltage switching circuits.
  • Suitable for driver stages in amplifiers.
  • Ideal for load switching in power supplies.
  • Applicable in consumer electronics power management.

FMMT596TA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FMMT596TA?

200V maximum (VCEO).

What is the maximum collector current?

300mA continuous (IC).

What is the package type for the FMMT596TA?

SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FMMT596TA RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the DC current gain (hFE) of this transistor?

Minimum 100 at 1mA and 100mA, minimum 85 at 250mA, and minimum 35 at 400mA (all at VCE=10V).

What is the transition frequency?

150MHz typical at Ic=50mA, Vce=10V.

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