FMMT591ATA

The FMMT591ATA is a 40V PNP medium power high performance transistor manufactured by Diodes Incorporated. It is designed for applications such as power MOSFET gate driving and low loss power switching. The device features a collector-emitter breakdown voltage (Vceo) of 40V, a continuous collector current (Ic) of 1A, and a peak pulse current (Icm) of 2A. DC current gain (hFE) is a minimum of 300 at 100mA collector current and 5V Vce, ensuring high current amplification. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 500mV at 1A, providing low on-resistance (Rsat of 350mΩ).

The transistor has a transition frequency (fT) of 150MHz, making it suitable for moderate-speed switching circuits. Power dissipation is 500mW, with a junction-to-ambient thermal resistance of 250°C/W. It operates over a junction temperature range of -55°C to 150°C. The device is qualified to AEC-Q101 standards for high reliability and is PPAP capable, making it suitable for automotive applications.

Packaged in a surface-mount SOT-23-3 case (TO-236-3, SC-59), the FMMT591ATA has matte tin plated leads and is moisture sensitivity level 1 per J-STD-020. It is fully RoHS compliant and halogen and antimony free. The complementary NPN type is the FMMT491A. Standard packaging is a 7-inch reel with 3000 units per reel.