FMMT555TA PNP medium power transistor rated for -150V collector-emitter breakdown and -1A continuous collector current. Housed in a surface-mount SOT-23-3 package.
Mfr Part #:

FMMT555TA

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP medium power transistor rated for -150V collector-emitter breakdown and -1A continuous collector current. Housed in a surface-mount SOT-23-3 package.
Total Stock: 49,180 pcs
$ Price Range: $0.16 - $0.68

FMMT555TA Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
49,020 pcs
49020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
160 pcs
160 pcs On Request 1 On Request On Request On Request On Request On Request

FMMT555TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (VCEO)
Continuous Collector Current (IC)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD HBM
ESD MM
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Peak Pulse Collector Current (ICM)
Power
Quantity Per Reel
Reel Size
Supplier Device Package
Tape & Reel
Tape Width
Termination Finish
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction to Lead (RθJL)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

FMMT555TA Description

Short technical summary and product information.

The FMMT555TA is a PNP medium power bipolar junction transistor from Diodes Incorporated. It features a collector-emitter breakdown voltage (VCEO) of -150V and a continuous collector current (IC) rating of -1A, with a peak pulse current (ICM) capability of -2A. The device offers a DC current gain (hFE) of 50 minimum at 300mA and 10V, and a transition frequency of 100 MHz.

 

Designed for general-purpose switching and amplification, the transistor includes ESD protection with HBM rating of 4000V and MM rating of 400V. The maximum power dissipation is 500 mW, and the operating junction temperature range spans -55°C to +150°C.

 

The part is supplied in a surface-mount SOT-23-3 package with matte tin plated leads. It is fully RoHS3 compliant, lead-free, and halogen- and antimony-free (green device). The complementary NPN type is the FMMT455.

FMMT555TA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FMMT555TA PNP Medium Power Transistor
Subcategory: Medium Power Transistor

FMMT555TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

FMMT555TA Estimated Pricing

Qty Low High
1+ $0.68 $0.68
10+ $0.42 $0.42
100+ $0.27 $0.27
500+ $0.20 $0.20
1,000+ $0.18 $0.18
3,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FMMT555TA Features

  • PNP medium power transistor in SOT-23-3.
  • Collector-emitter breakdown voltage of -150V.
  • Continuous collector current rating of -1A.
  • Transition frequency of 100 MHz.
  • RoHS3 compliant and halogen-free green device.

FMMT555TA Applications

  • Medium power switching circuits.
  • General purpose amplification applications.
  • Load driver circuits up to 1A.
  • Surface-mount power management designs.

FMMT555TA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FMMT555TA?

The maximum collector-emitter breakdown voltage (VCEO) is -150V.

What is the continuous collector current rating?

The maximum continuous collector current (IC) is -1A.

What package does the FMMT555TA come in?

It is supplied in a surface-mount SOT-23-3 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FMMT555TA RoHS compliant?

Yes, it is fully RoHS3 compliant (EU Directive 2015/863/EU).

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 50 at 300mA collector current and 10V VCE.

Does the FMMT555TA have ESD protection?

Yes, it is rated for 4000V HBM and 400V MM ESD.

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