Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
238,020 pcs
|
238020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,141 pcs
|
1141 pcs | On Request | 1 | On Request | On Request | 0422+ | On Request | On Request | |
|
329 pcs
|
329 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Base-Emitter Turn-On Voltage (VBE(on)) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Typical/Maximum @ Ic=1 mA, Vce=10 V) | |
| DC Current Gain (hFE) (Minimum/Typical/Maximum @ Ic=250 mA, Vce=10 V) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Rise Time (tr) | |
| Storage Time (ts) | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape/Reel Status | |
| Termination Style | |
| Transistor Type | |
| Turn-on Delay Time (td) | |
| Vce Saturation (Max) (Maximum @ Ib=10 mA, Ic=100 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FMMT497TA by Diodes Incorporated is a silicon planar NPN high voltage bipolar junction transistor designed for general purpose switching and amplification applications requiring elevated voltage handling.
This transistor features a collector-emitter breakdown voltage (VCEO) of 300V minimum and a continuous collector current rating of 500mA, with peak pulse current capability up to 1A. DC current gain (hFE) ranges from 80-300 at 100mA/10V test conditions, and a typical transition frequency of 75 MHz supports moderate-speed switching applications.
The device is supplied in a compact SOT-23-3 surface mount package with gull wing leads, making it suitable for space-constrained PCB designs. All electrical parameters are specified across an operating junction temperature range of -55°C to +150°C.
Switching performance is characterized with typical rise time of 126 ns and fall time of 228 ns at VCC=100V, providing predictable behavior in high voltage pulse circuits. The complementary PNP part is FMMT597.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.86 | $0.86 |
| 10+ | $0.39 | $0.39 |
| 100+ | $0.34 | $0.34 |
| 500+ | $0.29 | $0.29 |
| 1,000+ | $0.22 | $0.22 |
| 3,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is 300 V.
The maximum continuous collector current is 500 mA.
It is available in a surface mount SOT-23-3 package.
The operating junction temperature range is -55°C to +150°C.
The maximum power dissipation is 500 mW at 25°C ambient.
The data indicates RoHS3 Compliant status, but this is unverified with low confidence.