FMMT493ATA NPN medium power transistor with 60V breakdown voltage and 1A continuous collector current in SOT23-3 surface mount package.
Mfr Part #:

FMMT493ATA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
NPN medium power transistor with 60V breakdown voltage and 1A continuous collector current in SOT23-3 surface mount package.
Total Stock: 2,376 pcs
$ Price Range: $0.17 - $0.74

FMMT493ATA Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,376 pcs
2376 pcs On Request 1 On Request On Request On Request On Request On Request

FMMT493ATA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC-Q101
Base Current
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter-Base Voltage
Frequency
Halogen Free
Mounting Type
Operating Temperature
Peak Collector Current
Power
Reel Size
Standard Package Quantity
Supplier Device Package
Tape & Reel
Tape Width
Termination Finish
Thermal Resistance Junction-to-Ambient
Thermal Resistance, Junction to Lead
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

FMMT493ATA Description

Short technical summary and product information.

The FMMT493ATA is a high gain NPN medium power transistor from Diodes Incorporated, designed for various driving functions including motors, actuators, solenoids, and relays, as well as backlight inverters and DC-DC converter modules.

 

Key electrical specifications include a collector-emitter breakdown voltage of 60 V, continuous collector current of 1 A, and peak collector current of 2 A. The device offers a minimum DC current gain of 300 at 250 mA collector current and 10 V collector-emitter voltage, with a typical transition frequency of 150 MHz. Collector-emitter saturation voltage is typically 500 mV at 1 A collector current and 100 mA base current. Power dissipation is rated at 500 mW.

 

The transistor is housed in a surface mount SOT23-3 package with matte tin plated terminals and a green molding compound. It is available in tape and reel packaging with 3000 units per reel, on a 7-inch reel with 8 mm tape width. The device is qualified to AEC-Q101 standards for automotive reliability, RoHS3 compliant, and halogen and antimony free.

FMMT493ATA Quick Information

Product Type: Transistor - Bipolar (BJT) - Single
Canonical Name: FMMT493ATA NPN Medium Power Transistor
Subcategory: Medium Power Transistor

FMMT493ATA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 per J-STD-020
REACH Status: REACH Unaffected

FMMT493ATA Estimated Pricing

Qty Low High
1+ $0.74 $0.74
10+ $0.46 $0.46
100+ $0.30 $0.30
500+ $0.23 $0.23
1,000+ $0.20 $0.20
3,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

FMMT493ATA Features

  • High gain NPN transistor.
  • Continuous collector current 1A.
  • Collector-emitter voltage 60V.
  • Surface mount SOT23-3 package.
  • AEC-Q101 qualified for automotive.

FMMT493ATA Applications

  • Driving motors, actuators, solenoids, and relays.
  • Used in backlight inverters.
  • Suitable for DC-DC converter modules.

FMMT493ATA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FMMT493ATA?

The device is in a SOT23-3 surface mount package (SOT23 case code).

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the FMMT493ATA RoHS compliant?

Yes, it is RoHS3 compliant per EU 2015/863.

What is the maximum collector-emitter voltage?

The collector-emitter breakdown voltage is 60 V (minimum).

What is the continuous collector current rating?

The maximum continuous collector current is 1 A.

What is the DC current gain (hFE) at typical conditions?

Minimum hFE of 300 at Ic=250mA, Vce=10V.

What is the power dissipation of the FMMT493ATA?

Maximum power dissipation is 500 mW.

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