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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,035 pcs
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2035 pcs | On Request | 1 | On Request | On Request | 1109+ | On Request | On Request | |
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1,100 pcs
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1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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760 pcs
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760 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The FMMT2222ATA is an NPN bipolar junction transistor (BJT) from Diodes Incorporated designed for general-purpose switching and amplification applications.
Key electrical ratings include a maximum collector-emitter voltage (Vceo) of 40V, a maximum collector current (Ic) of 600mA, and a power dissipation (Pd) of 330mW. The transistor features a typical transition frequency (ft) of 300MHz, making it suitable for moderate-speed switching. DC current gain (hFE) is a minimum of 100 at Ic=150mA, Vce=10V, with a maximum collector-emitter saturation voltage of 1V at Ib=50mA, Ic=500mA.
The device is offered in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C.
The maximum collector-emitter voltage is 40 V.
The maximum collector current is 600 mA.
The maximum power dissipation is 330 mW.
The operating temperature range is -55°C to 150°C (junction).
It is available in a surface-mount SOT-23-3 package (also referred to as TO-236-3 or SC-59).
The part is marked as RoHS3 compliant.