| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Reverse Recovery Time | |
| SVHC Present | |
| Storage Temperature | |
| Thermal Resistance |
The Fujitsu Semiconductor FMH23N50E is an N-Channel Silicon Power MOSFET from the Super FAP-E3 series. It is designed for applications requiring low power loss and noise, such as switching regulators, UPS, and DC-DC converters.
Key electrical characteristics include a drain-source breakdown voltage of 500V, a gate threshold voltage typically around 3.0V, and a low on-state resistance of 0.21 Ohms at 11.5A and 10V gate drive. The MOSFET also features a continuous drain current of 23A and a pulsed drain current of 92A.
Packaged in a TO-3P(Q) case, this component is suitable for through-hole mounting. Its thermal characteristics include a channel-to-case thermal resistance of 0.40°C/W, allowing for efficient heat dissipation. The operating temperature range is from -55°C to +150°C.
This MOSFET maintains high avalanche durability and offers controllable switching characteristics. It is designed to minimize VGS ringing waveform during switching, contributing to more stable circuit operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500V.
The typical on-state resistance is 0.21 Ohms at 11.5A and 10V gate drive.
The continuous drain current is 23A.
The package type is TO-3P(Q).
The operating temperature range is -55°C to +150°C.
It is used in switching regulators, UPS, and DC-DC converters.