| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FMD40-06KC is an N-Channel MOSFET manufactured by IXYS. It has a drain-source breakdown voltage of 600V and a maximum drain current of 38A at case temperature. The device features a low on-resistance of 70mΩ (maximum) at 20A drain current and 10V gate drive. The gate threshold voltage is 3.9V, and the maximum gate-source voltage is ±20V. Total gate charge is 250nC at 10V gate voltage.
The MOSFET is housed in a through-hole i4-Pac-5 package with an ISOPLUS i4-PAC supplier device package. It operates over a junction temperature range of -55°C to 150°C. This component is designed for high-voltage switching applications where low on-resistance and efficient power handling are required. The through-hole mounting enables straightforward PCB integration in power electronics circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $39.66 | $39.66 |
| 25+ | $6.51 | $6.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The maximum drain current is 38A at case temperature.
The maximum on-resistance is 70mΩ at 20A drain current and 10V gate drive.
The device is available in a through-hole i4-Pac-5 package with an ISOPLUS i4-PAC supplier device package.
The operating junction temperature range is -55°C to 150°C.
It is marked as RoHS3 compliant, but this status is unverified.
The maximum total gate charge is 250nC at 10V gate voltage.