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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
$0.16
|
20 pcs |
$0.16
|
1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The FMBA56 is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter breakdown voltage of up to 80V and a continuous collector current of up to 500mA.
The transistor offers a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage. The maximum collector-emitter saturation voltage is 250mV at a base current of 10mA and collector current of 100mA. It has a transition frequency of 50MHz, making it suitable for moderate-speed switching circuits.
The FMBA56 is housed in a SuperSOT-6 surface mount package, which is compatible with SOT-23-6 Thin and TSOT-23-6 footprints. It supports an operating junction temperature range of -55°C to 150°C and dissipates up to 700mW of power.
| Qty | Low | High |
|---|---|---|
| 1,572+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FMBA56 is a PNP bipolar junction transistor.
The maximum collector-emitter breakdown voltage is 80V.
The maximum continuous collector current is 500mA.
The FMBA56 is available in a SuperSOT-6 surface mount package, compatible with SOT-23-6 Thin and TSOT-23-6 footprints.
The operating junction temperature range is -55°C to 150°C.
The FMBA56 is listed as RoHS3 compliant, but this status is unverified.