| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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44,212 pcs
|
44212 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Medical Grade | |
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The FMBA14 is a dual NPN bipolar junction transistor array manufactured by ON Semiconductor. It is designed for applications requiring two matched NPN transistors in a single package, offering a collector-emitter voltage (Vceo) of 30V and a collector current (Ic) rating of 1.2A. The device features a high DC current gain (hFE) of 20000 minimum at 100mA collector current and 5V Vce, enabling efficient amplification with low base drive requirements.
With a transition frequency (ft) of 1.25MHz, the FMBA14 is suitable for low-frequency switching and amplification circuits. The maximum collector-emitter saturation voltage (Vce(sat)) is 1.5V at a base current of 100µA and collector current of 100mA. The collector cutoff current (ICBO) is 100nA, indicating low leakage. The device can dissipate up to 700mW of power and operates over a junction temperature range of -55°C to 150°C.
The FMBA14 is housed in a SuperSOT-6 (SOT-23-6 Thin / TSOT-23-6) surface-mount package, which is compact and suitable for high-density PCB designs. The device is listed as RoHS3 compliant and REACH unaffected (unverified).
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 30V.
The FMBA14 is available in a SuperSOT-6 surface-mount package, which is a SOT-23-6 Thin or TSOT-23-6.
The junction operating temperature range is -55°C to 150°C.
The FMBA14 is listed as RoHS3 compliant, but this status is unverified. Please verify with the manufacturer.
The minimum DC current gain (hFE) is 20000 at a test condition of Ic=100mA and Vce=5V.
The collector current (Ic) is rated at 1.2A.