| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80,375 pcs
|
80375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
178 pcs
|
178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FMB5551 from onsemi is a dual NPN bipolar junction transistor array designed for general purpose high voltage amplification. It integrates two NPN transistors in a single SuperSOT-6 surface-mount package.
Each transistor provides a collector-emitter voltage (VCEO) of 160V, collector-base voltage (VCBO) of 180V, and emitter-base voltage (VEBO) of 6V. The device supports a continuous collector current of 600mA and dissipates up to 700mW at 25°C ambient (350mW per transistor). Minimum DC current gain (hFE) is 80 at 10mA collector current with 5V collector-emitter voltage, and saturation voltage is 200mV at 50mA/5mA. The current gain bandwidth product is 300MHz.
According to the datasheet, the FMB5551 is intended for general purpose high voltage amplifiers and gas discharge display driving circuits. The dual-transistor configuration offers a compact solution for designs requiring two matched NPN transistors. Junction temperature is rated to 150°C, with storage range from -55°C to +150°C.
The part is supplied in a SOT-23-6 Thin (TSOT-23-6) package, designated SuperSOT-6 by onsemi. It is available in tape and reel packaging with a standard quantity of 3,000 units. The device is Pb-free, halogen free/BFR free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.61 | $0.61 |
| 10+ | $0.38 | $0.38 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.18 | $0.18 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.13 | $0.13 |
| 6,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 160V; collector-base voltage (VCBO) is 180V.
The FMB5551 is offered in a SOT-23-6 Thin (TSOT-23-6) surface-mount package, with the supplier device package designated SuperSOT-6.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
Yes, the FMB5551 is RoHS3 compliant and also Pb-free and halogen free/BFR free as stated in the datasheet.
The maximum DC collector current (IC) is 600mA.
The minimum DC current gain (hFE) is 80 at IC=10mA and VCE=5V.
The total power dissipation at TA=25°C is 700mW, which equals 350mW per transistor.