| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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| Halogen Free | |
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The FM28V100-TGTR from Infineon Technologies (formerly Cypress Semiconductor) is a 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K x 8. This nonvolatile memory provides 151-year data retention and high endurance of 100 trillion read/writes, making it a superior alternative to battery-backed SRAM.
Key features include a fast 60-ns access time and 90-ns cycle time, with page mode operation down to 30 ns. It operates from a low voltage of 2.0 V to 3.6 V and is rated for an industrial temperature range of -40 °C to +85 °C. The device consumes low power, with active current typically 7 mA and standby current typically 90 µA.
Designed for reliability and ease of use, the FM28V100-TGTR is SRAM compatible and available in a 32-pin TSOP Type I surface mount package. Its advanced ferroelectric process ensures monolithic reliability and suitability for applications requiring frequent or rapid writes.
| Qty | Low | High |
|---|---|---|
| 1+ | $29.90 | $29.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
128K x 8.
60 ns.
2.0V to 3.6V.
-40°C to +85°C (industrial).
32-pin TSOP Type I surface-mount package.
151 years.
100 trillion read/write cycles.