| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,616 pcs
|
3616 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies FM28V100-TGTR is a 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K x 8. This nonvolatile memory retains data after power removal, offering superior reliability compared to battery-backed SRAM modules.
Key features include a high endurance of 100 trillion read/writes and 151-year data retention. It boasts a fast 60 ns access time and a 90 ns cycle time, with page mode operation down to 30 ns cycle time. The device operates over a wide voltage range of 2.0 V to 3.6 V and an industrial temperature range of -40 °C to +85 °C.
Designed for applications requiring frequent or rapid writes, the FM28V100-TGTR is SRAM compatible with an industry-standard 128K x 8 SRAM pinout. It consumes low power, with an active current of 7 mA typical and a standby current of 90 µA typical.
This memory is available in a 32-pin thin small outline package (TSOP) Type I, suitable for true surface mount solutions. It is also RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $29.90 | $29.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM28V100-TGTR is a 1-Mbit F-RAM memory organized as 128K x 8.
The FM28V100-TGTR offers a data retention period of 151 years.
The FM28V100-TGTR has a high endurance of 100 trillion read/writes.
The operating voltage range for the FM28V100-TGTR is 2.0 V to 3.6 V.
The FM28V100-TGTR has a maximum access time of 60 ns.
The FM28V100-TGTR operates in an industrial temperature range from -40 °C to +85 °C.
The FM28V100-TGTR is available in a 32-pin TSOP Type I package for surface mounting.