| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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821 pcs
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821 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Infineon Technologies FM28V100-TGTR is a 1-Mbit ferroelectric random access memory (F-RAM) organized as 128K x 8. This non-volatile memory offers high endurance with 100 trillion read/writes and 151-year data retention, surpassing traditional battery-backed SRAM modules.
Key electrical specifications include a fast 90ns access time and 90ns cycle time, with NoDelay™ writes and page mode operation to 30ns cycle time. It operates from a low voltage of 2V to 3.6V, consuming a typical active current of 7 mA and a standby current of 90 µA.
Designed for reliability and ease of use, the FM28V100-TGTR is SRAM compatible, featuring an industry-standard 128K x 8 SRAM pinout. It is housed in a 32-pin Thin Small Outline Package (TSOP) Type I, suitable for surface mounting.
This memory is ideal for applications requiring frequent or rapid writes, offering monolithic reliability and superior resistance to moisture, shock, and vibration. It operates within an industrial temperature range of -40°C to +85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $29.90 | $29.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM28V100-TGTR has a memory size of 1Mbit.
The FM28V100-TGTR is a Non-Volatile FRAM (Ferroelectric RAM) memory.
The operating voltage range for the FM28V100-TGTR is 2V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
The FM28V100-TGTR is supplied in a 32-TSOP I package.
The access time for the FM28V100-TGTR is 90 ns.
The FM28V100-TGTR offers 151-year data retention.