| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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230 pcs
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230 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies FM25V05-GTR is a 512-Kbit non-volatile memory utilizing an advanced ferroelectric process. This F-RAM offers high endurance with 100 trillion read/write cycles and 151-year data retention, eliminating the complexities of serial flash and EEPROM. It features a very fast SPI interface supporting up to 40 MHz and operates at bus speed with no write delays.
Designed for low power consumption, the FM25V05-GTR operates from 2.0 V to 3.6 V and is rated for industrial temperatures from -40°C to +85°C. It includes sophisticated write protection schemes, including hardware and software options, as well as software block protection. The device is available in an 8-pin SOIC package, making it a direct hardware replacement for serial flash and EEPROM in various applications.
Key features include a 64K x 8 organization, high-reliability ferroelectric process, and device ID capabilities. The low active current of 300 µA at 1 MHz, typical standby current of 90 µA, and sleep mode current of 5 µA make it suitable for power-sensitive designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.82 | $12.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM25V05-GTR has a memory size of 512 Kbit.
The FM25V05-GTR is a Non-Volatile FRAM (Ferroelectric RAM) memory.
The FM25V05-GTR supports a maximum clock frequency of 40 MHz.
The operating voltage range for the FM25V05-GTR is 2 V to 3.6 V.
The FM25V05-GTR operates in an industrial temperature range of -40°C to 85°C.
The FM25V05-GTR is supplied in an 8-SOIC package.
The FM25V05-GTR has a high endurance of 100 trillion (10^14) read/write cycles.