| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,101 pcs
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3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor FM25V02-G is a 256-Kbit ferroelectric random-access memory (F-RAM) offering high endurance and long data retention. It features a fast Serial Peripheral Interface (SPI) with a clock frequency up to 40 MHz, making it a direct hardware replacement for serial flash and EEPROM devices. This F-RAM performs write operations at bus speed with no write delays, ideal for applications requiring frequent or rapid writes.
The device is logically organized as 32 K × 8 bits and operates over a voltage range of 2.0 V to 3.6 V. It supports SPI modes 0 and 3 and includes a sophisticated write protection scheme with hardware and software options. The FM25V02-G is designed for industrial temperature ranges from -40°C to +85°C.
Available in an 8-pin SOIC package, the FM25V02-G is suitable for surface mount applications. Its advanced ferroelectric process provides reliable data retention for 151 years and high endurance of 100 trillion read/writes, making it ideal for demanding industrial controls and data collection systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM25V02-G has a memory size of 256 Kbit.
The FM25V02-G uses a SPI memory interface.
The operating voltage range for the FM25V02-G is 2 V to 3.6 V.
The operating temperature range of the FM25V02-G is -40°C to 85°C.
The FM25V02-G is available in an 8-SOIC package.
The FM25V02-G offers a data retention period of 151 years.
The FM25V02-G has an endurance rating of 100 trillion (10^14) read/writes.