FM25H20-DGTR

The Cypress Semiconductor FM25H20-DGTR is a 2-megabit nonvolatile Ferroelectric Random Access Memory (F-RAM) device. It utilizes an advanced ferroelectric process, providing RAM-like read and write speeds without write delays. This F-RAM offers reliable data retention for 10 years and boasts an exceptionally high endurance of 100 trillion read/write cycles, significantly exceeding that of serial flash memory.

Featuring a very fast Serial Peripheral Interface (SPI) with a frequency up to 40 MHz, the FM25H20-DGTR is designed for applications requiring frequent or rapid data writes and low power consumption. It operates within a low voltage range of 2.7V to 3.6V, with a typical sleep mode current of 3µA. The device supports SPI modes 0 and 3 and includes both hardware and software write protection schemes.

This memory is suitable for demanding industrial controls and data collection applications where write cycle limitations or long write times of other nonvolatile memories can be problematic. It is available in an 8-pin TDFN package and an 8-pin EIAJ SOIC package, both RoHS compliant. The device is specified for an industrial temperature range of -40°C to +85°C.

This product is in the pre-production phase of development. Device characterization is complete, and specifications are not expected to change, but a Product Change Notice will be issued if any changes are made.