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144 pcs
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144 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon FM24W256-EG is a 256-kilobit nonvolatile memory utilizing an advanced ferroelectric process. This F-RAM memory performs reads and writes at bus speed, eliminating write delays common in other nonvolatile memories. It offers exceptional write endurance, capable of supporting 10^14 read/write cycles, making it ideal for applications requiring frequent or rapid data writes.
Key features include a 256K bit capacity organized as 32,768 x 8 bits, a fast two-wire serial interface with up to 1 MHz bus frequency, and a wide operating voltage range of 2.7V to 5.5V. The device provides 38 years of data retention at +75°C and operates within an industrial temperature range of -40°C to +85°C.
Packaged in an 8-pin SOIC, the FM24W256-EG is a direct hardware replacement for serial EEPROM, offering enhanced reliability and performance. Its capabilities make it suitable for demanding industrial controls and data collection applications where write time and endurance are critical.
This product is currently in the pre-production phase, with device characterization complete. Cypress Semiconductor Corporation (now part of Infineon) expects no specification changes but will issue a Product Change Notice if any are made.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FM24W256-EG has a memory size of 256 Kbit, organized as 32,768 x 8 bits.
The FM24W256-EG uses an I2C interface with a maximum bus frequency of 1 MHz.
The operating voltage range for the FM24W256-EG is 2.7V to 5.5V.
The FM24W256-EG operates within an industrial temperature range of -40°C to +85°C.
The FM24W256-EG offers high endurance with 100 trillion (10^14) read/write cycles.
The FM24W256-EG provides 38 years of data retention at +75°C.
The FM24W256-EG is available in an 8-pin SOIC package.